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Asia Pacific is estimated to hold the largest share of 44.39% in 2024, driven by the presence of leading foundries like Taiwan Semiconductor Manufacturing Company (TSMC) and major contract manufacturers in Taiwan, South Korea, and China. Heavy investments in next-generation memory production are fuelled by aggressive promotion of domestic semiconductor production through incentives and subsidies in these countries. Global tech giants are increasingly partnering with local players for memory manufacturing, further bolstered by strong growth in consumer electronics, automotive, and mobile device industries across the region. South Korea, Taiwan, and Japan have emerged as major export hubs for next-generation non-volatile memories, with competitive pricing and ease of availability encouraging technology adoption. Additionally, manufacturing facilities of companies like Samsung Electronics, SK Hynix, and Toshiba serve the growing demand from China, India, and Southeast Asian nations. Steadily improving IP protection and supportive government policies are further enhancing the region's next-generation memory market.
In contrast, North America is the fastest-growing region in the next-generation memory technologies market and is expected to exhibit a CAGR of 32.71% during the forecast period 2024-2031, driven by a strong presence of leading technology companies in the U.S. The region dominates global research and development activities in resistive RAM (RRAM), 3D XPoint, phase-change memory (PCM), and magnetoresistive RAM (MRAM). Major chipmakers like Intel, Micron Technology, and Hewlett-Packard are headquartered in the U.S. and have invested significantly in next-generation memory startups through venture funding and acquisitions. This investment ensures that the most advanced next-generation memory technologies are commercialized and manufactured in North America first. The robust electronics manufacturing ecosystem and substantial domestic demand for data centers and consumer electronics further fuel the adoption of next-generation memory in the region.
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