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NEXT GENERATION MEMORY TECHNOLOGIES MARKET ANALYSIS

Next Generation Memory Technologies Market, By Technology (Non-volatile (Magneto-Resistive Random-Access Memory (MRAM), Ferroelectric RAM (FRAM), Resistive Random-Access Memory (ReRAM), 3D Xpoint, Nano RAM, and Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)), and Volatile ((Hybrid Memory Cube (HMC), High-bandwidth Memory (HBM)), By Industry Vertical (BFSI, Consumer Electronics, Government, Telecommunications, Information Technology, and Other Industries), By Geography (North America, Latin America, Asia Pacific, Europe, Middle East, and Africa)

  • Published In : Jun 2024
  • Code : CMI1191
  • Pages :170
  • Formats :
      Excel and PDF
  • Industry : Semiconductors

Next Generation Memory Technologies Market Size and Trends

The Next Generation Memory Technologies Market is estimated to be valued at USD 6.79 billion in 2024 and is expected to reach USD 38.92 billion by 2031, exhibiting a compound annual growth rate (CAGR) of 28.3% from 2024 to 2031.

Next Generation Memory Technologies Market Key Factors

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The next generation memory technologies market growth can be attributed to rising demand for universal memory technologies among various end-use verticals. Memories with higher storage capacity, lower power consumption, and near zero latency will continue gaining traction. Significant investments in R&D of new opportunities such as redox-based memory and phase change memory are estimated to disrupt the status quo. Further, the growing adoption of autonomous vehicles, high-performance computing, and internet of things are anticipated to boost the next generation memory technologies market growth during the forecast period.

Rising Demand for High Bandwidth Memories

The ever-growing demand for high-performance computing applications is driving the need for memory technologies that can provide vastly higher data bandwidth and lower latency compared to existing solutions. Applications in rapidly developing areas such as artificial intelligence, machine learning, autonomous vehicles, and augmented and virtual reality require memory subsystems that can deliver massive amounts of data to GPUs and other data-intensive processors at unprecedented speeds.

For instance, in August 2023, SK Hynix Inc. a semiconductor company, intensified the semiconductor technology competition with its latest next-generation high-bandwidth memory (HBM). The company successfully developed the 5th generation DRAM product, HBM3E, designed for high-performance artificial intelligence (AI) applications. This advanced HBM chip enhances data processing speeds by vertically integrating multiple DRAMs, surpassing conventional DRAM capabilities.

Market Concentration and Competitive Landscape

Next Generation Memory Technologies Market Concentration By Players

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Growing Adoption in Data Centers and Cloud Infrastructure

Next-generation memory solutions like 3D XPoint, STT-MRAM, and ReRAM are being actively evaluated by leading cloud providers for deployment in memory/storage hierarchy as they promise significantly higher densities, lower latencies, and better endurance than NAND alone. Big data centers are adopting tiered storage architectures leveraging non-volatile memories to optimize for factors like performance, cost-effectiveness, and power-efficiency across different access granularities and use cases. Top cloud operators have already started deploying 3D X.

As investments in data centers continue to rise, North America is expected to remain a prime destination for next-generation memory providers. For example, in March 2022, Vantage Data Centers, a leading provider of hyperscale data center campuses, announced an additional investment of USD 721.1 million (CAD 900 million) to expand its Canadian operations. This investment includes the construction of a third campus in Montreal and the expansion of two existing campuses in Quebec City and Montreal.

Key Takeaways from Analyst:

The next generation memory technologies market is poised to experience significant growth in the coming years. Driven by the need for faster, higher density and more energy efficient memory solutions, technologies such as resistive random-access memory (ReRAM), 3D XPoint, and magnetoresistive RAM (MRAM) are expected to gain traction. ReRAM's ability to meet the performance requirements of both storage class memory and main memory make it an attractive alternative to NAND and DRAM. Meanwhile, 3D XPoint's ability to provide speeds closer to DRAM but at a lower cost than NAND is driving demand from data centers and enterprise applications.

However, high manufacturing costs and lack of scalability could hinder the mass adoption of these technologies in the near future. Additionally, the dominance of NAND in storage and DRAM in main memory remain a challenge. NAND and DRAM manufacturers are making significant R&D investments to improve the attributes of their established products, which may slow the customer transition to next generation technologies.

The data center memory market is expected to be the fastest growing application segment. This is due to increasing adoption of memory intensive applications like AI, big data analytics, and high-performance computing in the cloud. The Asia Pacific region currently dominates the manufacturing of memory ICs and is likely to continue leading investments in emerging technologies.

Market Challenges: Competition from Established Technologies and Challenges of New Entrants

NAND flash and DRAM technologies cast a long shadow over the next-generation memory market. Their established performance, reliability, and lower production costs make them the dominant players. This creates a significant hurdle for new entrants. Potential users are hesitant to adopt unproven technologies with potentially higher upfront costs for manufacturers. Next-generation solutions need to demonstrate consistent performance and reliability on a large scale, while simultaneously achieving competitive production costs, to gain wider market acceptance.

Market Opportunities: Addressing Evolving Needs and the Rise of Universal Memory Solutions

The data storage landscape is undergoing a significant shift. Across various industries, demands for higher density and advanced scaling in memory solutions are intensifying. This presents a crucial opportunity for next-generation memory technologies. They have the potential to address these growing needs more effectively than traditional options. Furthermore, the increasing complexity of electronic devices and the proliferation of Internet of Things (IoT) applications necessitate a new breed of memory solutions. Universal memory solutions, offering greater flexibility and adaptability to cater to diverse needs, will be highly sought after. Next-generation technologies that can bridge the gap between high density and adaptability will be well-positioned for significant market share gains.

Next Generation Memory Technologies Market By Technology

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Insights, By Technology, Rising Dominance of Non-Volatile Memory in Next-Generation Technologies

The non-volatile segment of the next-generation memory technologies market is expected to dominate with a 66.8% share in 2024, driven by the need for data storage solutions that retain information without power. NAND flash memory, widely used in USB drives, SD cards, and SSDs, is pivotal due to its high capacity and cost-effectiveness.

The shift from HDDs to SSDs in laptops and desktops, along with the growing demand for digital content storage on portable devices, fuels this trend. Enterprises are increasingly adopting SSDs for data centers for faster input/output and lower power consumption. In the automotive sector, rising memory requirements for computer modules in vehicles also boost demand.

Emerging technologies like ReRAM and 3D XPoint promise even higher capacities and better performance, catering to the expanding needs driven by advancements in AI, virtual reality, and the Internet of Things. This will continue to propel the growth of non-volatile memory in the next-generation memory technologies market.

Insights, By Industry Vertical, Consumer Electronics Driving Memory Technologies

Consumer electronics, accounting for 27.51% in 2024, are fueled by devices like smartphones, tablets, laptops, and gaming consoles. DRAM and SRAM are vital for temporary storage and processing in these gadgets.

Smartphones, now digital hubs, demand substantial DRAM, especially flagship models with 12GB or more RAM. Gaming PCs and consoles also rely on high-speed GDDR memory for immersive experiences. Emerging tech like AR/VR headsets and wearables will further drive memory needs.

Software advancements and workload demands will continually push for higher-capacity, lower-power volatile memory in consumer tech, indicating sustained demand.

Regional Insights

Next Generation Memory Technologies Market Regional Insights

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Asia Pacific is estimated to hold the largest share of 44.39% in 2024, driven by the presence of leading foundries like Taiwan Semiconductor Manufacturing Company (TSMC) and major contract manufacturers in Taiwan, South Korea, and China. Heavy investments in next-generation memory production are fuelled by aggressive promotion of domestic semiconductor production through incentives and subsidies in these countries. Global tech giants are increasingly partnering with local players for memory manufacturing, further bolstered by strong growth in consumer electronics, automotive, and mobile device industries across the region. South Korea, Taiwan, and Japan have emerged as major export hubs for next-generation non-volatile memories, with competitive pricing and ease of availability encouraging technology adoption. Additionally, manufacturing facilities of companies like Samsung Electronics, SK Hynix, and Toshiba serve the growing demand from China, India, and Southeast Asian nations. Steadily improving IP protection and supportive government policies are further enhancing the region's next-generation memory market.

In contrast, North America is the fastest-growing region in the next-generation memory technologies market and is expected to exhibit a CAGR of 32.71% during the forecast period 2024-2031, driven by a strong presence of leading technology companies in the U.S. The region dominates global research and development activities in resistive RAM (RRAM), 3D XPoint, phase-change memory (PCM), and magnetoresistive RAM (MRAM). Major chipmakers like Intel, Micron Technology, and Hewlett-Packard are headquartered in the U.S. and have invested significantly in next-generation memory startups through venture funding and acquisitions. This investment ensures that the most advanced next-generation memory technologies are commercialized and manufactured in North America first. The robust electronics manufacturing ecosystem and substantial domestic demand for data centers and consumer electronics further fuel the adoption of next-generation memory in the region.

Market Report Scope

Next Generation Memory Technologies Market Report Coverage

Report Coverage Details
Base Year: 2023 Market Size in 2024: US$ 6.79 Bn
Historical Data for: 2019 To 2023 Forecast Period: 2024 To 2031
Forecast Period 2024 to 2031 CAGR: 28.3% 2031 Value Projection: US$ 38.92 Bn
Geographies covered:
  • North America: U.S. and Canada
  • Latin America: Brazil, Argentina, Mexico, and Rest of Latin America
  • Europe: Germany, U.K., Spain, France, Italy, Russia, and Rest of Europe
  • Asia Pacific: China, India, Japan, Australia, South Korea, ASEAN, and Rest of Asia Pacific
  • Middle East & Africa: South Africa, GCC Countries, Israel, and Rest of Middle East & Africa
Segments covered:
  • By Technology: Non-volatile (Magneto-Resistive Random-Access Memory (MRAM), Ferroelectric RAM (FRAM), Resistive Random-Access Memory (ReRAM), 3D Xpoint, Nano RAM, and Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)), and Volatile ((Hybrid Memory Cube (HMC), High-bandwidth Memory (HBM))
  • By Industry Vertical: BFSI, Consumer Electronics, Government, Telecommunications, Information Technology, and Other Industries 
Companies covered:

Adesto Technologies, Avalanche Technologies Inc., Crossbar Inc., Cypress Semiconductor Corporation, Everspin Technologies Inc., Fujitsu Ltd, Honeywell International Inc., IBM Corporation, Intel Corporation, Micron Technologies Inc., Samsung Electronics Co. Ltd, SK Hynix Inc., Sony Corporation, Taiwan Semiconductor Manufacturing Company Limited (TSMC), and Toshiba Corporation

Growth Drivers:
  • Rising Demand for High Bandwidth Memories
  • Growing Adoption in Data Centers and Cloud Infrastructure
Restraints & Challenges:
  • Competition from Established Technologies and Challenges of New Entrants
  • Technological Hurdles and Intellectual Property Concerns

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Next Generation Memory Technologies Industry News

  • In April 2023, SK Hynix Inc. became the first in the industry to develop a 12-layer HBM3 product with a 24-gigabyte (GB) memory capacity, currently the largest in the industry. This 24 GB package product increases memory capacity by 50% from the previous generation, following the mass production of the world’s first HBM3 in June 2022.
  • In May 2022, Everspin Technologies Inc., a semiconductor company, (U.S.) launched STT-MRAM EMxxLX xSPI Family, offering densities ranging from 8 Mbit to 64 Mbit
  • In March 2022, Fujitsu a Semiconductor Memory Solution provider, (Japan) introduced a 12Mbit ReRAM (Resistive Random Access Memory), MB85AS12MT, the largest density in Fujitsu’s ReRAM product family. The MB85AS12MT is a non-volatile memory with 12Mbit density and operates across a wide range of power supply voltages from 1.6V to 3.6V.

*Definition: The Next Generation Memory Technologies Market involves research and development of new types of memory technologies that could potentially replace or complement existing memory technologies like NAND flash, DRAM, and magnetic hard disk drives. These next generation memory technologies aim to offer substantially higher storage densities, better performance, and lower power requirements compared to current memory solutions. Some examples of next generation memory technologies being researched include resistance RAM, phase-change memory, and magneto resistive RAM.

Market Segmentation

  • Technology Insights (Revenue, USD Bn, 2019 - 2031)
    • Non-volatile
      • Magneto-Resistive Random-Access Memory (MRAM)
      • Ferroelectric RAM (FRAM)
      • Resistive Random-Access Memory (ReRAM)
      • 3D Xpoint
      • Nano RAM
      • Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
    • Volatile
      • Hybrid Memory Cube (HMC)
      • High-bandwidth Memory (HBM)
  •  Industry Vertical Insights (Revenue, USD Bn, 2019 - 2031)
    • BFSI
    • Consumer Electronics
    • Government
    • Telecommunications
    • Information Technology
    • Other Industries
  • Regional Insights (Revenue, USD Bn, 2019 - 2031)
    • North America
      • U.S.
      • Canada
    • Latin America
      • Brazil
      • Argentina
      • Mexico
      • Rest of Latin America
    • Europe
      • Germany
      • U.K.
      • Spain
      • France
      • Italy
      • Russia
      • Rest of Europe
    • Asia Pacific
      • China
      • India
      • Japan
      • Australia
      • South Korea
      • ASEAN
      • Rest of Asia Pacific
    • Middle East & Africa
      • South Africa
      • GCC Countries
      • Israel
      • Rest of Middle East & Africa
  • Key Players Insights
    • Adesto Technologies
    • Avalanche Technologies Inc.
    • Crossbar Inc.
    • Cypress Semiconductor Corporation
    • Everspin Technologies Inc.
    • Fujitsu Ltd
    • Honeywell International Inc.
    • IBM Corporation
    • Intel Corporation
    • Micron Technologies Inc.
    • Samsung Electronics Co. Ltd
    • SK Hynix Inc.
    • Sony Corporation
    • Taiwan Semiconductor Manufacturing Company Limited (TSMC)
    • Toshiba Corporation

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About Author

Pooja Tayade -is an experienced management consultant with a strong background in the Semiconductors and Consumer Electronics industries. Over the past 9 years, she has helped leading global companies in these sectors optimize their operations, drive growth, and navigate complex challenges. She He has led successful projects that delivered significant business impact, such as:

  • Facilitating international expansion for a mid-sized tech enterprise, navigating regulatory compliance in 4 new countries and growing foreign revenue by 50%
  • Implementing lean manufacturing principles that reduced production costs by 15% for a major semiconductor fab

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Frequently Asked Questions

The global Next Generation Memory Technologies Market size is estimated to be valued at USD 6.79 billion in 2024 and is expected to reach USD 38.92 billion in 2031.

The CAGR of the next generation memory technologies market is projected to be 28.3% from 2024 to 2031.

Rising demand for high bandwidth memories and growing adoption in data centers and cloud infrastructure are the major factors driving the growth of the next generation memory technologies market.

Competition from established technologies and challenges of new entrants and technological hurdles and intellectual property concerns are the major factors hampering the growth of the next generation memory technologies market.

In terms of Technology, Non-volatile is estimated to dominate the market revenue share in 2024.

Adesto Technologies, Avalanche Technologies Inc., Crossbar Inc., Cypress Semiconductor Corporation, Everspin Technologies Inc., Fujitsu Ltd, Honeywell International Inc., IBM Corporation, Intel Corporation, Micron Technologies Inc., Samsung Electronics Co. Ltd, SK Hynix Inc., Sony Corporation, Taiwan Semiconductor Manufacturing Company Limited (TSMC), and Toshiba Corporation are the major players.

Asia Pacific is expected to lead the next generation memory technologies market.
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