Key Developments

In October 2023, Samsung Electronics Co. announced plans to begin mass production of 300-layer NAND flash memory chips in early 2024, a year ahead of schedule compared to SK hynix Inc.'s 321-layer NAND memory
In June 2023, SK hynix Inc. started the mass production of its 238-layer 4D NAND Flash memory, intended for smartphones, PCIe 5.0 SSDs, and high-capacity server SSDs
In October 2023, Kioxia Corporation and Western Digital Corp. unveiled their latest 3D flash memory technology, offering exceptional capacity, performance, and reliability at a competitive cost
In August 2023, SK Hynix developed 321-layer NAND flash memory, increasing data capacity by 59% compared to its previous 238-layer memory, with mass production expected in the first half of 2025
In April 2024, Samsung Electronics Co. launched the mass production of its new 286-layer NAND chips, increasing storage capacity by 50% and shipping samples to tech giants like Google and Apple for AI data centers and smartphones
In April 2024, Kioxia announced plans to mass-produce 3D NAND memory with over 1,000 layers by 2031, addressing technical challenges during a lecture at the 71st Applied Physics Society Spring Meeting
In October 2023, despite U.S. sanctions, China's YMTC unveiled the world's most advanced 3D NAND memory chip, the 232-layer X3-9070, showcasing China's commitment to its semiconductor industry
In August 2023, SK Hynix introduced its groundbreaking 321-layer 3D NAND flash technology at the Flash Memory Summit, boasting a storage capacity of 1Tbit per silicon die