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MOSFET AND IGBT GATE DRIVERS MARKET ANALYSIS

MOSFET and IGBT Gate Drivers Market, by Product Type (Single Channel Gate Drivers, Half Bridge Gate Drivers, Full Bridge Gate Drivers, Three Phase Gate Drivers, and Other), by Application (Home Appliance, Automotive, Display & Lighting, Power Supply, and Others), by Geography (North America, Europe, Asia Pacific, Latin America, Middle East, and Africa) - Size, Share, Outlook, and Opportunity Analysis, 2022-2028

  • To Be Published : Nov 2024
  • Code : CMI1838
  • Formats :
      Excel and PDF
  • Industry : Semiconductors

Market News

Global MOSFET and IGBT Gate Driver Market: Key Developments

  • In September 2018, Powerex Inc. launched the new and upgraded 7th generation IGBTs for motor control. As a result, the motor’s efficiency increased by 7% at no load, up to 20% at peak load, and power also increased to 20%.
  • In November 2018, Renesas Electronics Corporation launched a 100V Half-Bridge Drive MOSFETs for Bidirectional Controller in 12V-48V Automotive Hybrid Powertrains. It is an advanced ISL784x4 MOSFET Driver Family which enables high current DC/DC conversion with adjustable dead time and maximum efficiency.
  • In May 2017, Toshiba Corporation launched ‘TLP5214A’, a smart gate driver photocoupler for use in driving medium-power IGBTs and power MOSFETs that deliver desaturation sensing characteristics.
  • In July 2018, Toshiba Corporation launched new compact power MOSFET gate driver intelligent power device (IPD) for automotive 3-phase brushless motors. The device is intended for use in automotive motor drive applications such as 12V electronic power steering (EPS), oil/ water pumps, fan motors, and electric turbochargers.
  • In November 2017, IXYS Corporation introduced a new driver for high frequency applications such as inverters, which is IXRFDSM607X2 15 Ampere Low-Side RF MOSFET Driver by its IXYS Colorado division.
  • In May 2017, Analog Devices, Inc. (ADI) introduced small form factor isolated gate drivers designed for higher switching speeds and system size constraints required by power switch technologies such as SiC (Silicon Carbide) and GaN (Gallium Nitride).

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