IGBT AND SUPER JUNCTION MOSFET MARKET ANALYSIS

Market Challenges And Opportunities

Market Dynamics- Restraints

Competition from other power semiconductors is expected to hamper the global IGBT and super junction MOSFET market growth over the forecast period. The semiconductor industry is focused on achieving better efficiency, lower size, and cost through novel substrate technologies. Gallium-Nitride (GaN) and Silicon-Carbide have emerged as new competing technologies in the power semiconductor industry alongside the already existing thyristors, rectifiers, and integrated gate-commutated thyristor (IGCT) among others. Although the IGBT and super junction MOSFETs are expected to continue to grow, the semiconductor sector has shown increased interest in GaN devices due to the aforementioned advantage in breakdown voltage, power density, and switching frequency.

High production cost is expected to restrain growth of the global IGBT and super junction MOSFET market during the forecast period. Super junction MOSFET requires a significantly high cost for production as compared to other contemporary products. As a result of this, the majority of consumers are inclined towards substitute products.

Market Dynamics- Drivers

Growing focus on higher energy efficiency is expected to drive growth of the global IGBT and super junction MOSFET market during the forecast period. The demand for high energy efficiency has increased in the recent past providing ample opportunities for IGBT and super junction MOSFETs. Constant design improvements across the electrical and electronics industry have led to increased demand for IGBT and MOSFETs. At the same time, the alternative and renewable energy market have gained significant traction, especially the solar and wind energy market. According to Coherent Market Insights’ analysis, solar photovoltaic (PV) inverter shipments are expected to reach 53.6 million units by 2016, growing from 14.3 million units. Furthermore, rising focus on increasing electricity transmission efficiency has supported growth of smart grids market thereby boosting the demand for IGBT and MOSFETs.

Rising deployment of electric vehicles and hybrid electric vehicles (EV/HEV) is expected to boost the global IGBT and super junction MOSFET market growth over the forecast period. Electrification in cars with an internal combustion engine has led to increased demand for power semiconductors. According to the International Energy Agency, the global EV sales increased from 2011 to 113,000. Increasing fuel efficiency and emission norms mandated by governments across the globe has led to increasing demand for electric vehicles. Electronic control and smart power management are needed to reduce emissions from vehicles. As a result of this, the demand for IGBT and super junction MOSFETs.

Market Opportunities

Rapid growth of smart grids market can present lucrative growth opportunities in the global IGBT and super junction MOSFET market. The global smart grid market is expanding rapidly, owing to a major increase in the installation of smart meters worldwide, in order to ensure improved efficiency in power transmissions and distribution. According to Coherent Market Insights’ analysis, the global smart grid market was valued at US$ 35 billion in 2012, reaching US$ 65-70 billion. This smart distribution infrastructure and smart meters will need better power management technology and are expected to create demand for power semiconductors including IGBTs and super junction MOSFETs in this sector.

Major business opportunities available Asia Pacific IGBT and super junction MOSFET market. Asia Pacific is an emerging market with massive growth opportunities present. Rapid industrialization and urbanization in emerging economies such as India, China, and Indonesia have led to increasing demand for IGBT and super junction MOSFETs. Major companies in the market can capitalize on these opportunities by introducing novel products and gain a competitive edge.