GALLIUM NITRIDE POWER DEVICE MARKET ANALYSIS

Gallium Nitride Power Device MarketSize and Trends

The global Gallium Nitride Power Device Market size was valued at US$ 178.3 million in 2022 and is anticipated to witness a compound annual growth rate (CAGR) of 24.65% from 2023 to 2030. Gallium nitride (GaN) is used in production of semiconductor power devices and Radio-Frequency (RF) components and light emitting diodes (LEDs). GaN powered devices have proved efficient than silicon semiconductors in power conversion, RF, and analog applications. GaN conducts electrons over 1000 times more efficiently than silicon. Moreover, the manufacturing cost of GaN devices is lower than silicon, since GaN devices are produced using standard silicon manufacturing procedures in the same factories that currently produce conventional silicon semiconductors. The devices are much smaller for the same functional performance and can be produced per wafer. GaN is lower on resistance giving lower conductance losses. The devices powered by GaN are faster that yield less switching losses and less capacitance results in less losses when charging and discharging devices. Moreover, GaN devices need less power to drive the circuit and require less space on the printed circuit board. These significant benefits of GaN over other alternatives such as silicon transistors are expected to fuel the overall growth of the GaN power device market.

Global Gallium Nitride Power Device Market Trends:

Market players are focusing on GaN-based solutions emerge to meet control and charging needs

Market players are aiming to bring the benefits of GaN technology into play, power IC vendors are rolling out new devices for control and automotive charging applications. In recent years, the electronics industry has witnessed a paradigm shift in power management solutions, particularly in the realm of charging devices. The advent of gallium nitride (GaN) technology has revolutionized the way engineers approach power conversion and delivery systems, effectively challenging the long-standing dominance of silicon-based chargers. Due to which market players are focusing on product development strategies. For instance, March 20, 2023, Navitas Semiconductor next-generation power Semiconductor Company launched its GaNSense Control device, a GaN-based system-on-chip (SoC) designed for fast charging applications.

Growing demand of GaN in 5G multi-chip modules

GaN is becoming more and more popular in 5G multi-chip modules since these networks require greater energy efficiency. Many semiconductor companies are therefore working to incorporate GaN into 5G multi-chip modules. NXP Semiconductors, for instance, declared in June 2021 that GaN technology has been included into their multi-chip module. GaN was employed in multi-chip modules to increase efficiency over the company\'s previous offering.