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GALLIUM NITRIDE POWER DEVICE MARKET ANALYSIS

Gallium Nitride Power Device Market, By Device Type (Power Device, RF Power Device), By Voltage Range (<200 Volt, 200-600 Volt, >600 Volt), By End User (Power Drives, Supply and Inverter, Radio Frequency), By Vertical (Telecommunications, Industrial, Automotive, Renewables, Consumer and Enterprise, Military, Defense, and Aerospace, Medical), By Region (North America, Latin America, Europe, Middle East & Africa, and Asia Pacific)

  • Published In : May 2023
  • Code : CMI1221
  • Pages :166
  • Formats :
      Excel and PDF
  • Industry : Semiconductors

Market Challenges And Opportunities

Global Gallium Nitride Power Device Market Drivers:

Rising utilization of GaN Ups Efficiency in Next-Generation Wireless Chargers

GaN power devices are employed in wireless charging applications because of their extremely high switching capability. With regard to the carrier frequency in resonant transfer, GaN transistors are superior. This enables them to transfer power over long distances in a variety of consumer, medical, industrial, and automotive applications. Consequently, enhancing the GaN devices\' declining cost is just another factor driving demand for them in wireless charging applications over the forecast period, this is anticipated to spur the growth of the global GaN power device market. Further, Market players are focusing on designing chargers are seeking a competitive edge in building devices that produce higher efficiency, a smaller footprint, and lower system cost. Substituting gallium-nitride (GaN) e-mode high-electron-mobility transistor (HEMT) devices for traditional MOSFETs which is expected to boost the demand of

Growing demand of in automotive industry

GaN enables smaller, more efficient and lower cost power systems. For the automotive industry, smaller, lighter batteries, improved charging performance, and greater range for vehicles. Additionally, GaN advances capabilities in the vehicle autonomous and wireless power applications including Vehicle Electrification (Onboard Chargers & DC/DC Converters, Traction Inverters) ADAS Solutions (LiDAR autonomous control, Wireless Power Transfer). According to coherent market insights EVs are expected to grow from 2 million in 2017 to 120 million in 2035. In order to avoid electricity production and distribution. Moreover, Electronic systems in EVs and HEVs are expected to create a surge in demand for GaN semiconductor devices, particularly for control systems, motor drives, braking systems, and lighting and displays. DC-DC converters, electric motors, and inverters in various automobile body parts such as battery systems, mechanical systems, and cooling systems which is expected to boost the demand of gallium nitride power device in the industry

Global Gallium Nitride Power Device Market Opportunities:

Increased Venture Capital Funding Providing Opportunities for Key Manufacturers

Develop Venture capital firms provide funding to a number of GaN semiconductor device makers, which aids in the improvement of their product lines and competitiveness. For instance, the power chip manufacturer GaN Systems reported in November 2021 that it had raised US$ 150 million in a capital round. With the help of this finance, the company has been able to advance GaN technology acceptance and innovation throughout its consumer, automotive, industrial, and corporate industries. Additionally, fabless semiconductor company Cambridge GaN Devices raised US$ 9.5 million in a Series A round in February 2021. The company increased their GaN product line.

Global Gallium Nitride Power Device Market Restraints:

Lack of Material avability

Less GaN Material Availability the primary barrier to the popular commercialization of GaN power devices is a lack of supply. Despite the fact that some GaN devices are easily accessible, the choice is limited. Off-line power supply that are higher than 600 volts are typically used by fewer devices. The lack of standardized device ratings and features restricts the mainstream use of GaN power devices. The greatest barrier to the widespread usage of GaN devices is the lack of true second sources for any products on the market.

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