DISCRETE SEMICONDUCTOR MARKET ANALYSIS

Key Developments

• In January 2023, Renesas Electronics Corporation introduced a new gate driver IC designed for high-voltage power devices like IGBTs and SiC MOSFETs for EV inverters
• Hitachi Astemo, Ltd. announced in January 2023 that its electric vehicle inverters would utilize ROHM Semiconductor's fourth-generation SiCMOSFETs and gate driver ICs, offering improved efficiency and cruising range
• STMicroelectronics launched new silicon-carbide (SiC) high-power modules in December 2022 to enhance electric vehicle performance and range. Hyundai selected five of these modules for use in the E-GMP electric vehicle platform shared by the KIA EV6 and multiple models.
• Renesas Electronics Corporation announced the development of a new generation of Si-IGBTs in August 2022, targeting next-generation EV inverters. The AE5-generation IGBTs were set to be mass-produced starting in the first half of 2023.