IGBT and Super Junction MOSFET Market
The IGBT and Super Junction MOSFET Market is estimated to be valued at USD 18.51 Bn in 2025 and is expected to reach USD 41.69 Bn by 2032, exhibiting a compound annual growth rate (CAGR) of 12.3% from 2025 to 2032. Insulated gate bipolar transistor (IGBT) and super junction MOSFET are important power semiconductor devices that are commonly used in industrial motor controls, renewable energy conversion systems, electric vehicles, and power supplies. IGBTs have high input impedance and fast switching speeds similar to MOSFETs, but with the high current and low saturation voltage capabilities of BJTs. Whereas super junction MOSFETs have higher voltage blocking capability and switching speeds compared to IGBTs due to their unique charge compensation structure. Both IGBTs and super junction MOSFETs are displacing conventional bipolar transistors in many high-power applications due to their advantages of higher efficiencies, compact sizes, and lower costs.
Market Dynamics:
The global IGBT and super junction MOSFET market growth is driven by the rising demand for energy efficient and compact power electronics devices across various industries. Growing industrial automation and increasing investment in renewable energy and electric vehicles are fueling the adoption of IGBTs and super junction MOSFETs. However, high manufacturing cost and complexity involved in developing high voltage variants remains a challenge. The market provides opportunities with innovations to enhance wafer sizes and develop monolithic and non-silicon super junction structures to reduce costs and enable wider applications.
Key features of the study:
- This report provides in-depth analysis of the global IGBT and super junction MOSFET market, and provides market size (US$ Billion) and compound annual growth rate (CAGR%) for the forecast period (2025–2032), considering 2024 as the base year
- It elucidates potential revenue opportunities across different segments and explains attractive investment proposition matrices for this market
- This study also provides key insights about market drivers, restraints, opportunities, new product launches or approval, market trends, regional outlook, and competitive strategies adopted by key players
- It profiles key players in the global IGBT and super junction MOSFET market based on the following parameters – company highlights, products portfolio, key highlights, financial performance, and strategies
- Key companies covered as a part of this study include Infineon Technologies AG, STMicroelectronics, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., Toshiba Corporation, ON Semiconductor, ROHM Co., Ltd., Vishay Intertechnology, Renesas Electronics Corporation, NXP Semiconductors, Semikron International GmbH, ABB Ltd., Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., and IXYS Corporation
- Insights from this report would allow marketers and the management authorities of the companies to make informed decisions regarding their future product launches, type up-gradation, market expansion, and marketing tactics
- The global IGBT and super junction MOSFET market report caters to various stakeholders in this industry including investors, suppliers, product manufacturers, distributors, new entrants, and financial analysts
Market Segmentation
Table of Contents
*Browse 32 market data tables and 28 figures on 'IGBT and Super Junction MOSFET Market' - Global forecast to 2032
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