The global gallium nitride power device market includes the gallium nitride power and RF power devices that find predominant applications in power drives (electric vehicle drives, industrial drives, light detection), inverters, supplies, wireless charging, RF front end module, radars and space satellites. Extensive range of applications and the potential to cannibalize the existing silicon semiconductor market are expected to create immense opportunity for growth of the global GaN power devices market over the forecast period.

Market Dynamics:

Gallium materials include a wide range of features such as wide energy band gap (3.4eV), high heat capacity, thermal conductivity, low device resistance, and ability to operate at transition speeds from on to off and vice versa, are among the prominent benefits, inadvertently driving growth of the GaN power devices market. High conductivity in on state in comparison to alternatives such as silicon substitutes present high opportunity to improve the energy efficiency in power distribution and control systems. However, limited availability and relatively high cost of the material is expected to hinder the overall growth of the market in the near future.

Key features of the study:

• This report provides in-depth analysis of the global gallium nitride power device market, and provides market size (US$ Million) and compound annual growth rate (CAGR%) for the forecast period (2023–2030), considering 2022 as the base year
• It elucidates potential revenue opportunities across different segments and explains attractive investment proposition matrices for this market
• This study also provides key insights about market drivers, restraints, opportunities, new product launches or approval, market trends,  regional outlook, and competitive strategies adopted by key players
• It profiles key players in the global gallium nitride power device market based on the following parameters – company highlights, products portfolio, key highlights, financial performance, and strategies
• Key companies covered as a part of this study include
• Insights from this report would allow marketers and the management authorities of the companies to make informed decisions regarding their future product launches, type up-gradation, market expansion, and marketing tactics
• The global gallium nitride power device market report caters to various stakeholders in this industry including investors, suppliers, product manufacturers, distributors, new entrants, and financial analysts
• Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the global gallium nitride power device market

Detailed Segmentation:

• Global Gallium Nitride Power Device Market, By Device Type
  • Power Device
  • RF Power Device
• Global Gallium Nitride Power Device Market, By Voltage Range
  • <200 Volt
  • 200-600 Volt
  • >600 Volt
• Global Gallium Nitride Power Device Market, By End User
  • Power Drives
  • Supply and Inverter
  • Radio Frequency
• Global Gallium Nitride Power Device Market, By Vertical
  • Telecommunications
  • Industrial
  • Automotive
  • Renewables
  • Consumer and Enterprise
  • Military, Defense, and Aerospace
  • Medical
• Global Gallium Nitride Power Device Market, By Geography
  • North America
  • Europe
  • Asia Pacific
  • Latin America
  • Middle East & Africa
• Company Profiles:
  • Cree Inc.
  • Efficient Power Conversion (EPC) Corporation
  • Infineon Technologies
  • GaN Systems Inc.
  • Macom
  • Microsemi Corporation
  • Mitsubishi Electric
  • Navitas Semiconductor
  • Qorvo
  • Toshiba Electronic Devices & Storage Corporation