POWER ELECTRONICS MARKET SIZE AND SHARE ANALYSIS - GROWTH TRENDS AND FORECASTS (2024-2031)

Key Developments

• In June 2023, Mitsubishi Electric Corporation announced the development of a novel chip structure that integrates a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) with a Schottky barrier diode (SBD). This innovative design has been incorporated into Mitsubishi Electric's 3.3 kV full SiC power module, the FMF800DC-66BEW, which is targeted at large industrial applications such as railways and DC power systems.
• In May 2023, Infineon introduced two new additions to its CoolSiC power module portfolio - the FF2000UXTR33T2M1 and FF2600UXTR33T2M1. These modules utilize Infineon's newly developed 3.3 kV CoolSiC MOSFET technology and the company's proprietary XT interconnection technology. Designed specifically for traction applications, the power modules come in Infineon's XHP 2 package, which enables low switching losses while maintaining high reliability and power density.
• In May 2023, Infineon Technologies AG introduced its latest generation of power MOSFET devices for automotive applications - the OptiMOS 740 V MOSFET family. This new product line leverages 300 mm thin wafer technology and innovative packaging to deliver significant performance improvements in a compact form factor.
• In January 2023, Renesas Electronics announced the development of a new gate driver IC designed to efficiently drive high-voltage power devices, including insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) MOSFETs, for use in electric vehicle (EV) inverters.