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CHEMICAL VAPOR DEPOSITION MARKET Size and trends

Chemical Vapor Deposition Market, By Technology (Plasma-Enhanced Chemical Vapor Deposition (PECVD), Low-Pressure Chemical Vapor Deposition (LPCVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD), and Other Technologies), By Application (Semiconductors, Solar Cells, Optical Coatings, Medical Devices, and Others), By Geography (North America, Latin America, Asia Pacific, Europe, Middle East, and Africa)

  • Published In : Feb 2025
  • Code : CMI7424
  • Pages :140
  • Formats :
      Excel and PDF
  • Industry : Advanced Materials

Chemical Vapor Deposition Market Size and Trends

Global chemical vapor deposition market is estimated to be valued at USD 26.53 Bn in 2025 and is expected to reach USD 49.47 Bn by 2032, exhibiting a compound annual growth rate (CAGR) of 9.3% from 2025 to 2032.

Chemical Vapor Deposition Market Key Factors

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Global chemical vapor deposition market is driven by growing demand for chemical vapor deposition equipment across various industries like electronics, machinery, and medical devices. Technological advancements are enabling higher process through put and uniform coatings at nano-scale levels. Key players such as Applied Materials, Inc., Lam Research Corporation and other are investing in Research and Development R&D to develop new deposition materials and reduce cost of ownership. The use of CVD for applications like solar panels and smart devices will boost the demand for chemical vapor deposition equipment. However, availability of alternative deposition techniques may hamper the market growth to some extent during the forecast years.

Increasing demand for advanced semiconductor devices

The ubiquitous presence of electronic devices in our lives has meant that the demand for more advanced and powerful semiconductor chips is ever increasing. In applications ranging from smartphones to artificial intelligence, there is a constant push for higher performance and lower power consumption from semiconductors. This is driving semiconductor manufactures to integrate more components on a single chip by using techniques like 3D stacking. However, shrinking transistor sizes and integrating diverse functionalities on a chip comes with its own set of challenges. Reliability, yield and precise deposition of various thin films have become critical to successfully manufacture advanced logic and memory chips.

Chemical vapor deposition (CVD) is one of the primary deposition techniques used during the fabrication of semiconductors. It allows for the homogeneous deposition of uniform thin films on wafers through chemical reactions between vapor phase chemicals and the substrate surface. Advancements like plasma enhanced CVD (PECVD) have enabled the industry to deposit films with angstrom level thickness control at high speeds. As chips integrate more functions with each new generation, conventional deposition processes are finding it harder to meet requirements. This is spurring increased adoption of atomic layer deposition (ALD), a variant of CVD, which can precisely deposit monolayers of materials. Further, 3D architectures require conformal, seamless thin film coverage over high aspect ratio structures which traditional CVD struggles with. Next generation deposition technologies like spatial ALD try to overcome this by independently dosing precursor gases at different locations on the substrate.

The transition to ever smaller transistor features called for in Moore’s law also demands tighter control over film properties and composition at the atomic scale. Variations in materials parameters across the wafer can hamper device performance and yield. Advanced metrology integrated into deposition tools helps achieve greater uniformity and repeatability by giving real time feedback. The demand for more powerful logic and memory chips in applications driving our increasingly digital lives relies on continued advancement of the underlying semiconductor technology. This puts CVD and its variants at the center of enabling the next technology nodes, driving continued growth.

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